Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.13091/90
Title: Interface modification of DNTT-based organic field effect transistors using boronic acid derivatives
Authors: Alıç, Tuğbahan Yılmaz
Ablat, Abduleziz
Kyndiah, Adrica
Nicolas, Yohann
Can, Mustafa
Kuş, Mahmut
Abbas, Mamatimin
Keywords: Boronic Acid Derivatives
Dielectric/Semiconductor Interface
Organic Field Effect Transistor
Phenylboronic Acid
Monolayers
Issue Date: 2020
Publisher: IOP PUBLISHING LTD
Abstract: The dielectric/semiconductor interface in organic field effect transistors (OFETs) is critical to their performance. Modification of this interface with functional molecules provides a wide range of possibilities for their applications as sensors. In this work, boronic acid molecules were used to modify the SiO2 dielectric surface in dinaphtho[2,3-b:2',3'-f]thieno[3,2-b] thiophene based OFETs. The device parameters, including most notably the threshold voltage, were significantly improved. The dielectric/semiconductor interface was analyzed using various measurement techniques, such as contact angle and atomic force microscopy. Our work provides evidence that easily functionable boronic acid derivatives improve the device performance of OFETs, which lays the foundation for further studies of such interface modified OFETs for use in sensing applications.
URI: https://doi.org/10.1088/1361-6463/ab52e1
https://hdl.handle.net/20.500.13091/90
ISSN: 0022-3727
1361-6463
Appears in Collections:Mühendislik ve Doğa Bilimleri Fakültesi Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collections
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collections

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