Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.13091/3056
Title: | A dopant-free 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT)-based hole transporting layer for highly stable perovskite solar cells with efficiency over 22% | Authors: | Kaya, İsmail Cihan Özdemir, Resul Usta, Hakan Sönmezoğlu, Savaş |
Keywords: | High-Performance Stability Degradation Transistors Migration Mobility Impact |
Publisher: | Royal Soc Chemistry | Abstract: | In this study, for the first time, n-i-p PSCs were fabricated using dopant-free 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) as the solution-processed hole transporting layer (HTL). The power conversion efficiency (PCE) of the optimized device with the C8-BTBT film that favored edge-on molecular alignment was 22.45% with negligible hysteresis. A thinner dopant-free C8-BTBT HTL effectively protected the perovskite layer from moisture resulting in better shelf-life stability for un-encapsulated PSCs, which maintained >80% of its initial PCE (after a period of 120 days) at a relative humidity level of 40-45%. In addition, the C8-BTBT-based PSCs kept their high performance with no obvious PCE loss at 60 degrees C for 20 days in the ambient atmosphere and retained 82% of their initial PCE at 85 degrees C for 10 days. Overall, our findings revealed that a thin solution-processed C8-BTBT HTL plays a critical role not only in hole extraction and transport but also in greatly improving the ambient and thermal stability of n-i-p PSCs. | URI: | https://doi.org/10.1039/d2ta01541b https://hdl.handle.net/20.500.13091/3056 |
ISSN: | 2050-7488 2050-7496 |
Appears in Collections: | Mühendislik ve Doğa Bilimleri Fakültesi Koleksiyonu Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collections WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collections |
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