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https://hdl.handle.net/20.500.13091/3056
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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kaya, İsmail Cihan | - |
dc.contributor.author | Özdemir, Resul | - |
dc.contributor.author | Usta, Hakan | - |
dc.contributor.author | Sönmezoğlu, Savaş | - |
dc.date.accessioned | 2022-10-08T20:51:28Z | - |
dc.date.available | 2022-10-08T20:51:28Z | - |
dc.date.issued | 2022 | - |
dc.identifier.issn | 2050-7488 | - |
dc.identifier.issn | 2050-7496 | - |
dc.identifier.uri | https://doi.org/10.1039/d2ta01541b | - |
dc.identifier.uri | https://hdl.handle.net/20.500.13091/3056 | - |
dc.description.abstract | In this study, for the first time, n-i-p PSCs were fabricated using dopant-free 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) as the solution-processed hole transporting layer (HTL). The power conversion efficiency (PCE) of the optimized device with the C8-BTBT film that favored edge-on molecular alignment was 22.45% with negligible hysteresis. A thinner dopant-free C8-BTBT HTL effectively protected the perovskite layer from moisture resulting in better shelf-life stability for un-encapsulated PSCs, which maintained >80% of its initial PCE (after a period of 120 days) at a relative humidity level of 40-45%. In addition, the C8-BTBT-based PSCs kept their high performance with no obvious PCE loss at 60 degrees C for 20 days in the ambient atmosphere and retained 82% of their initial PCE at 85 degrees C for 10 days. Overall, our findings revealed that a thin solution-processed C8-BTBT HTL plays a critical role not only in hole extraction and transport but also in greatly improving the ambient and thermal stability of n-i-p PSCs. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Royal Soc Chemistry | en_US |
dc.relation.ispartof | Journal of Materials Chemistry A | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | High-Performance | en_US |
dc.subject | Stability | en_US |
dc.subject | Degradation | en_US |
dc.subject | Transistors | en_US |
dc.subject | Migration | en_US |
dc.subject | Mobility | en_US |
dc.subject | Impact | en_US |
dc.title | A dopant-free 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT)-based hole transporting layer for highly stable perovskite solar cells with efficiency over 22% | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1039/d2ta01541b | - |
dc.identifier.scopus | 2-s2.0-85131751110 | en_US |
dc.department | Fakülteler, Mühendislik ve Doğa Bilimleri Fakültesi, Metalurji ve Malzeme Mühendisliği Bölümü | en_US |
dc.authorid | OZDEMIR, Resul/0000-0002-7957-110X | - |
dc.authorid | SONMEZOGLU, Savas/0000-0002-6011-3504 | - |
dc.authorid | KAYA, Ismail Cihan/0000-0003-0773-0391 | - |
dc.authorwosid | OZDEMIR, Resul/A-3227-2016 | - |
dc.authorwosid | SONMEZOGLU, Savas/K-9362-2016 | - |
dc.identifier.volume | 10 | en_US |
dc.identifier.issue | 23 | en_US |
dc.identifier.startpage | 12464 | en_US |
dc.identifier.endpage | 12472 | en_US |
dc.identifier.wos | WOS:000804203100001 | en_US |
dc.institutionauthor | Kaya, İsmail Cihan | - |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.authorscopusid | 56966296500 | - |
dc.authorscopusid | 57191349789 | - |
dc.authorscopusid | 14042943100 | - |
dc.authorscopusid | 14619683900 | - |
dc.identifier.scopusquality | Q1 | - |
item.languageiso639-1 | en | - |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
item.cerifentitytype | Publications | - |
item.grantfulltext | embargo_20300101 | - |
item.fulltext | With Fulltext | - |
item.openairetype | Article | - |
crisitem.author.dept | 02.11. Department of Metallurgical and Materials Engineering | - |
Appears in Collections: | Mühendislik ve Doğa Bilimleri Fakültesi Koleksiyonu Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collections WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collections |
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d2ta01541b.pdf Until 2030-01-01 | 926.84 kB | Adobe PDF | View/Open Request a copy |
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