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https://hdl.handle.net/20.500.13091/302
Title: | Synthesis of in situ N-, S-, and B-doped few-layer graphene by chemical vapor deposition technique and their superior glucose electrooxidation activity | Authors: | Çağlar, Aykut Ulaş, Berdan Şahin, Özlem Kıvrak, Hilal |
Keywords: | Cvd Glucose Graphene N B And S In Situ Doping Oxygen Reduction Reaction Metal-Organic Frameworks One-Pot Synthesis High-Quality Formic-Acid Monolayer Graphene Reaction Catalyst Hydrogen-Sulfide Highly Efficient Carbon-Monoxide |
Publisher: | WILEY | Abstract: | At present, N-, S-, and B-doped grapheme-modified indium tin oxide (ITO) electrodes are produced and doping method effect on the glucose electrooxidation is investigated. Firstly, few-layer graphene is produced by chemical vapor deposition (CVD) method. Then, N, S, and B doping is carried out after graphene produced by CVD to prepare N-doped, B-doped, and S-doped few-layer graphene. N, S, and B doping is carried out by two different ways as (a) doping after synthesis of few-layer graphene and (b) in situ doping during few-layer graphene production. These materials are characterized by X-ray diffraction, scanning electron microscopy-energy (SEM), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). One could note that graphene and nitrogen networks are clearly visible from SEM images. Raman spectra show that B, N, and S are doped on few-layer graphene/ITO successfully. XPS results of graphene, N-doped graphene, and in situ N-doped graphene reveal that graphene and nitrogen atoms used in the preparation of the electrodes obtain mainly in their elemental state. Then, these N-, S-, B-doped and in situ N-, S-, B-doped few-layer graphene materials are coated onto indium tin oxide (ITO) to obtain N-, S-, B-doped and in situ N-, S-, B-doped ITO electrodes for glucose (C6H12O6) electrooxidation. C6H12O6 electrooxidation measurements are investigated with cyclic voltammetry, chronoamperometry, and electrochemical impedance spectroscopy measurements. As a result, in situ N-doped few-layer graphene/ITO electrode displays the best C6H12O6 electrooxidation activity with 9.12 mA.cm(-2) current density compared with other N-, S-, B-doped graphene and in situ doped S and B grapheme-modified ITO electrodes. Furthermore, this current density value for in situ N-doped few-layer graphene/ITO is highly above the values reported in the literature. In situ N-doped few-layer graphene/ITO electrode is a promising electrode for C6H12O6 electrooxidation because it exhibits the best electrocatalytic activity, stability, and resistance compared with other electrodes. | URI: | https://doi.org/10.1002/er.4817 https://hdl.handle.net/20.500.13091/302 |
ISSN: | 0363-907X 1099-114X |
Appears in Collections: | Mühendislik ve Doğa Bilimleri Fakültesi Koleksiyonu Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collections WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collections |
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Intl J of Energy Research - 2019 - Caglar - Synthesis of in situ N‐ S‐ and B‐doped few‐layer graphene by chemical vapor.pdf Until 2030-01-01 | 2.88 MB | Adobe PDF | View/Open Request a copy |
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