Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.13091/302
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dc.contributor.authorÇağlar, Aykut-
dc.contributor.authorUlaş, Berdan-
dc.contributor.authorŞahin, Özlem-
dc.contributor.authorKıvrak, Hilal-
dc.date.accessioned2021-12-13T10:23:59Z-
dc.date.available2021-12-13T10:23:59Z-
dc.date.issued2019-
dc.identifier.issn0363-907X-
dc.identifier.issn1099-114X-
dc.identifier.urihttps://doi.org/10.1002/er.4817-
dc.identifier.urihttps://hdl.handle.net/20.500.13091/302-
dc.description.abstractAt present, N-, S-, and B-doped grapheme-modified indium tin oxide (ITO) electrodes are produced and doping method effect on the glucose electrooxidation is investigated. Firstly, few-layer graphene is produced by chemical vapor deposition (CVD) method. Then, N, S, and B doping is carried out after graphene produced by CVD to prepare N-doped, B-doped, and S-doped few-layer graphene. N, S, and B doping is carried out by two different ways as (a) doping after synthesis of few-layer graphene and (b) in situ doping during few-layer graphene production. These materials are characterized by X-ray diffraction, scanning electron microscopy-energy (SEM), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). One could note that graphene and nitrogen networks are clearly visible from SEM images. Raman spectra show that B, N, and S are doped on few-layer graphene/ITO successfully. XPS results of graphene, N-doped graphene, and in situ N-doped graphene reveal that graphene and nitrogen atoms used in the preparation of the electrodes obtain mainly in their elemental state. Then, these N-, S-, B-doped and in situ N-, S-, B-doped few-layer graphene materials are coated onto indium tin oxide (ITO) to obtain N-, S-, B-doped and in situ N-, S-, B-doped ITO electrodes for glucose (C6H12O6) electrooxidation. C6H12O6 electrooxidation measurements are investigated with cyclic voltammetry, chronoamperometry, and electrochemical impedance spectroscopy measurements. As a result, in situ N-doped few-layer graphene/ITO electrode displays the best C6H12O6 electrooxidation activity with 9.12 mA.cm(-2) current density compared with other N-, S-, B-doped graphene and in situ doped S and B grapheme-modified ITO electrodes. Furthermore, this current density value for in situ N-doped few-layer graphene/ITO is highly above the values reported in the literature. In situ N-doped few-layer graphene/ITO electrode is a promising electrode for C6H12O6 electrooxidation because it exhibits the best electrocatalytic activity, stability, and resistance compared with other electrodes.en_US
dc.description.sponsorshipScientific and Technological Research CouncilTurkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [116M004]en_US
dc.description.sponsorshipThe Scientific and Technological Research Council, Grant/Award Number: 116M004en_US
dc.language.isoenen_US
dc.publisherWILEYen_US
dc.relation.ispartofINTERNATIONAL JOURNAL OF ENERGY RESEARCHen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCvden_US
dc.subjectGlucoseen_US
dc.subjectGrapheneen_US
dc.subjectNen_US
dc.subjectBen_US
dc.subjectAnd Sen_US
dc.subjectIn Situ Dopingen_US
dc.subjectOxygen Reduction Reactionen_US
dc.subjectMetal-Organic Frameworksen_US
dc.subjectOne-Pot Synthesisen_US
dc.subjectHigh-Qualityen_US
dc.subjectFormic-Aciden_US
dc.subjectMonolayer Grapheneen_US
dc.subjectReaction Catalysten_US
dc.subjectHydrogen-Sulfideen_US
dc.subjectHighly Efficienten_US
dc.subjectCarbon-Monoxideen_US
dc.titleSynthesis of in situ N-, S-, and B-doped few-layer graphene by chemical vapor deposition technique and their superior glucose electrooxidation activityen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/er.4817-
dc.identifier.scopus2-s2.0-85070879218en_US
dc.departmentFakülteler, Mühendislik ve Doğa Bilimleri Fakültesi, Kimya Mühendisliği Bölümüen_US
dc.authoridKivrak, Hilal/0000-0001-8001-7854-
dc.authorwosidKivrak, Hilal/AAQ-8663-2021-
dc.authorwosidulas, berdan/AAI-9979-2021-
dc.identifier.volume43en_US
dc.identifier.issue14en_US
dc.identifier.startpage8204en_US
dc.identifier.endpage8216en_US
dc.identifier.wosWOS:000481967200001en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.authorscopusid57201153766-
dc.authorscopusid57203167255-
dc.authorscopusid24766836200-
dc.authorscopusid25959155500-
dc.identifier.scopusqualityQ1-
item.grantfulltextembargo_20300101-
item.fulltextWith Fulltext-
item.languageiso639-1en-
item.cerifentitytypePublications-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairetypeArticle-
crisitem.author.dept02.01. Department of Chemical Engineering-
Appears in Collections:Mühendislik ve Doğa Bilimleri Fakültesi Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collections
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collections
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