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https://hdl.handle.net/20.500.13091/302
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DC Field | Value | Language |
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dc.contributor.author | Çağlar, Aykut | - |
dc.contributor.author | Ulaş, Berdan | - |
dc.contributor.author | Şahin, Özlem | - |
dc.contributor.author | Kıvrak, Hilal | - |
dc.date.accessioned | 2021-12-13T10:23:59Z | - |
dc.date.available | 2021-12-13T10:23:59Z | - |
dc.date.issued | 2019 | - |
dc.identifier.issn | 0363-907X | - |
dc.identifier.issn | 1099-114X | - |
dc.identifier.uri | https://doi.org/10.1002/er.4817 | - |
dc.identifier.uri | https://hdl.handle.net/20.500.13091/302 | - |
dc.description.abstract | At present, N-, S-, and B-doped grapheme-modified indium tin oxide (ITO) electrodes are produced and doping method effect on the glucose electrooxidation is investigated. Firstly, few-layer graphene is produced by chemical vapor deposition (CVD) method. Then, N, S, and B doping is carried out after graphene produced by CVD to prepare N-doped, B-doped, and S-doped few-layer graphene. N, S, and B doping is carried out by two different ways as (a) doping after synthesis of few-layer graphene and (b) in situ doping during few-layer graphene production. These materials are characterized by X-ray diffraction, scanning electron microscopy-energy (SEM), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). One could note that graphene and nitrogen networks are clearly visible from SEM images. Raman spectra show that B, N, and S are doped on few-layer graphene/ITO successfully. XPS results of graphene, N-doped graphene, and in situ N-doped graphene reveal that graphene and nitrogen atoms used in the preparation of the electrodes obtain mainly in their elemental state. Then, these N-, S-, B-doped and in situ N-, S-, B-doped few-layer graphene materials are coated onto indium tin oxide (ITO) to obtain N-, S-, B-doped and in situ N-, S-, B-doped ITO electrodes for glucose (C6H12O6) electrooxidation. C6H12O6 electrooxidation measurements are investigated with cyclic voltammetry, chronoamperometry, and electrochemical impedance spectroscopy measurements. As a result, in situ N-doped few-layer graphene/ITO electrode displays the best C6H12O6 electrooxidation activity with 9.12 mA.cm(-2) current density compared with other N-, S-, B-doped graphene and in situ doped S and B grapheme-modified ITO electrodes. Furthermore, this current density value for in situ N-doped few-layer graphene/ITO is highly above the values reported in the literature. In situ N-doped few-layer graphene/ITO electrode is a promising electrode for C6H12O6 electrooxidation because it exhibits the best electrocatalytic activity, stability, and resistance compared with other electrodes. | en_US |
dc.description.sponsorship | Scientific and Technological Research CouncilTurkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [116M004] | en_US |
dc.description.sponsorship | The Scientific and Technological Research Council, Grant/Award Number: 116M004 | en_US |
dc.language.iso | en | en_US |
dc.publisher | WILEY | en_US |
dc.relation.ispartof | INTERNATIONAL JOURNAL OF ENERGY RESEARCH | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | Cvd | en_US |
dc.subject | Glucose | en_US |
dc.subject | Graphene | en_US |
dc.subject | N | en_US |
dc.subject | B | en_US |
dc.subject | And S | en_US |
dc.subject | In Situ Doping | en_US |
dc.subject | Oxygen Reduction Reaction | en_US |
dc.subject | Metal-Organic Frameworks | en_US |
dc.subject | One-Pot Synthesis | en_US |
dc.subject | High-Quality | en_US |
dc.subject | Formic-Acid | en_US |
dc.subject | Monolayer Graphene | en_US |
dc.subject | Reaction Catalyst | en_US |
dc.subject | Hydrogen-Sulfide | en_US |
dc.subject | Highly Efficient | en_US |
dc.subject | Carbon-Monoxide | en_US |
dc.title | Synthesis of in situ N-, S-, and B-doped few-layer graphene by chemical vapor deposition technique and their superior glucose electrooxidation activity | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1002/er.4817 | - |
dc.identifier.scopus | 2-s2.0-85070879218 | en_US |
dc.department | Fakülteler, Mühendislik ve Doğa Bilimleri Fakültesi, Kimya Mühendisliği Bölümü | en_US |
dc.authorid | Kivrak, Hilal/0000-0001-8001-7854 | - |
dc.authorwosid | Kivrak, Hilal/AAQ-8663-2021 | - |
dc.authorwosid | ulas, berdan/AAI-9979-2021 | - |
dc.identifier.volume | 43 | en_US |
dc.identifier.issue | 14 | en_US |
dc.identifier.startpage | 8204 | en_US |
dc.identifier.endpage | 8216 | en_US |
dc.identifier.wos | WOS:000481967200001 | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.authorscopusid | 57201153766 | - |
dc.authorscopusid | 57203167255 | - |
dc.authorscopusid | 24766836200 | - |
dc.authorscopusid | 25959155500 | - |
dc.identifier.scopusquality | Q1 | - |
item.grantfulltext | embargo_20300101 | - |
item.fulltext | With Fulltext | - |
item.languageiso639-1 | en | - |
item.cerifentitytype | Publications | - |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
item.openairetype | Article | - |
crisitem.author.dept | 02.01. Department of Chemical Engineering | - |
Appears in Collections: | Mühendislik ve Doğa Bilimleri Fakültesi Koleksiyonu Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collections WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collections |
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Intl J of Energy Research - 2019 - Caglar - Synthesis of in situ N‐ S‐ and B‐doped few‐layer graphene by chemical vapor.pdf Until 2030-01-01 | 2.88 MB | Adobe PDF | View/Open Request a copy |
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