Investigation and Calculation of Electrical Performance of Lead-Free Agbii4 Perovskite Based Schottky Photodiode Using Machine Learning

Abstract

Lead-free nanoparticles gain importance due to their environmentally clean and reliable production processes in optoelectronics. In this study, we synthesized AgBiI4 lead-free perovskite material and used it as an interlayer to obtain a Schottky photodiode structure. Optical, morphological, and structural properties were investigated via UV-Vis, SEM, SEM-EDS, AFM, and XRD. The crystal structure was confirmed by X-ray diffraction (XRD) results. The results obtained from the UV-Visible spectrophotometer clearly showed the peaks of the crystal structure at 566.94 nm. The band gap calculated from UV-Vis results was 1.91 eV for AgBiI4 perovskite crystals. We used AgBiI4 structures as interlayers between n-type Si and Al to obtain a photodiode heterostructure and investigate their structural sensing performance using current-voltage and current-transient measurements. Ideality factor and barrier height values were calculated using machine learning. Lead-free perovskite structures recorded excellent photodetector properties, reaching 2.636 A/W responsivity and 1.30 x 1011 Jones detectivity.