Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.13091/5734
Full metadata record
DC FieldValueLanguage
dc.contributor.authorYılmaz, Tuğbahan-
dc.date.accessioned2024-06-19T14:41:56Z-
dc.date.available2024-06-19T14:41:56Z-
dc.date.issued2024-
dc.identifier.issn0957-4522-
dc.identifier.issn1573-482X-
dc.identifier.urihttps://doi.org/10.1007/s10854-024-12720-3-
dc.identifier.urihttps://hdl.handle.net/20.500.13091/5734-
dc.description.abstractInterface modification is a promising technique for enhancing electrical parameters of Organic Field Effect Transistor (OFETs). In OFETs, self-assembled monolayer molecules are widely used for treatment dielectric/semiconductor interface layer. Modification of dielectric/semiconductor layer with SAM molecules ensures a variety of potential applications. Boronic acids with four different alkyl chain lengths (C n -BA; n = 8, 10, 12, 14) molecules were used in this study to treat the Al2O3 dielectric surface in dinaphtho[2,3-b:2 ',3 '-f]thieno[3,2-b]thiophene (DNTT) based OFETs. Treated with SAMs improve the mobility of Al2O3 surfaces for linear and saturation regime and threshold voltages shifted from positive direction. The morphological and electrical characterizations were performed for fabricated OFET. The results show that alkyl-boronic acids SAM molecules open a new perspective for further optoelectronic applications due to its application for oxide surfaces and controllability.en_US
dc.description.sponsorshipTrkiye Bilimsel ve Teknolojik Arascedil;timath;rma Kurumuen_US
dc.description.sponsorshipNo Statement Availableen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of materials science-materials in electronicsen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectPhenylboronic Aciden_US
dc.subjectThreshold-Voltageen_US
dc.subjectCharge-Transporten_US
dc.subjectLarge-Areaen_US
dc.subjectPolymersen_US
dc.subjectSurfacesen_US
dc.subjectOxidesen_US
dc.titleImproving the performance parameters of organic field-effect transistors via alkyl chain length of boronic acid self-assembled monolayersen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s10854-024-12720-3-
dc.identifier.scopus2-s2.0-85193313049en_US
dc.departmentKTÜNen_US
dc.identifier.volume35en_US
dc.identifier.issue14en_US
dc.identifier.wosWOS:001224136900004en_US
dc.institutionauthorYılmaz, Tuğbahan-
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.authorscopusid57219531149-
item.grantfulltextnone-
item.openairetypeArticle-
item.cerifentitytypePublications-
item.fulltextNo Fulltext-
item.languageiso639-1en-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
crisitem.author.dept07. 19. Department of Nuclear Technology and Radiation Safety-
Appears in Collections:Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collections
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collections
Show simple item record



CORE Recommender

Page view(s)

36
checked on Oct 7, 2024

Google ScholarTM

Check




Altmetric


Items in GCRIS Repository are protected by copyright, with all rights reserved, unless otherwise indicated.