Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.13091/1717
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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Gürsoy, Mehmet | - |
dc.contributor.author | Çıtak, Emre | - |
dc.contributor.author | Karaman, Mustafa | - |
dc.date.accessioned | 2022-01-30T17:32:56Z | - |
dc.date.available | 2022-01-30T17:32:56Z | - |
dc.date.issued | 2022 | - |
dc.identifier.issn | 1976-4251 | - |
dc.identifier.issn | 2233-4998 | - |
dc.identifier.uri | https://doi.org/10.1007/s42823-021-00309-3 | - |
dc.identifier.uri | https://hdl.handle.net/20.500.13091/1717 | - |
dc.description.abstract | Large-area graphene of the order of centimeters was deposited on copper substrates by low-pressure chemical vapor deposition (LPCVD) using hexane as the carbon source. The effect of temperature and the carrier gas flowrates on the quality and uniformity of the as-deposited graphene was investigated using the Raman analysis. The film deposited at 870 degrees C with a total carrier gas flowrate of 50 sccm is predominantly single-layer with very low defects according to the Raman spectra. The 2D/G peak intensity ratios obtained from the Raman spectra of samples from three different locations of graphene deposited on a whole copper catalyst was used to calculate the large-area uniformity. Based on the results, a very high uniformity of 89.6% was calculated for the graphene deposited at 870 degrees C. The uniformity was observed to decrease with increasing temperature. Similar to the thickness uniformity, the electrical conductivity values obtained as a result of I-V measurements and water contact angle measurements were found to be close to each other for the graphene deposited under the same deposition conditions. | en_US |
dc.description.sponsorship | Scientific and Technological Research Council of Turkey -(TUBITAK)Turkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [118M041] | en_US |
dc.description.sponsorship | This study was supported by the Scientific and Technological Research Council of Turkey -(TUBITAK) with a grant number of 118M041. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Springer Japan Kk | en_US |
dc.relation.ispartof | Carbon Letters | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | Graphene | en_US |
dc.subject | Lpcvd | en_US |
dc.subject | Uniformity | en_US |
dc.subject | Large-Area | en_US |
dc.subject | Single-Layer Graphene | en_US |
dc.subject | Growth | en_US |
dc.subject | Transparent | en_US |
dc.subject | Exfoliation | en_US |
dc.title | Uniform deposition of large-area graphene films on copper using low-pressure chemical vapor deposition technique | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1007/s42823-021-00309-3 | - |
dc.identifier.scopus | 2-s2.0-85120081637 | en_US |
dc.department | Fakülteler, Mühendislik ve Doğa Bilimleri Fakültesi, Kimya Mühendisliği Bölümü | en_US |
dc.identifier.wos | WOS:000723570000001 | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.authorscopusid | 57208454280 | - |
dc.authorscopusid | 57205571516 | - |
dc.authorscopusid | 35269112600 | - |
dc.identifier.scopusquality | Q2 | - |
item.cerifentitytype | Publications | - |
item.grantfulltext | embargo_20300101 | - |
item.languageiso639-1 | en | - |
item.openairetype | Article | - |
item.fulltext | With Fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
crisitem.author.dept | 02.01. Department of Chemical Engineering | - |
crisitem.author.dept | 02.01. Department of Chemical Engineering | - |
Appears in Collections: | Mühendislik ve Doğa Bilimleri Fakültesi Koleksiyonu Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collections WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collections |
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File | Size | Format | |
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s42823-021-00309-3.pdf Until 2030-01-01 | 2.52 MB | Adobe PDF | View/Open Request a copy |
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