Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.13091/1555
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dc.contributor.authorYıldırım, Murat-
dc.contributor.authorKoçyiğit, Adem-
dc.contributor.authorSarılmaz, Adem-
dc.contributor.authorÖzel, Sultan Süleyman-
dc.contributor.authorKuş, Mahmut-
dc.contributor.authorÖzel, Faruk-
dc.date.accessioned2021-12-13T10:41:31Z-
dc.date.available2021-12-13T10:41:31Z-
dc.date.issued2020-
dc.identifier.issn0361-5235-
dc.identifier.issn1543-186X-
dc.identifier.urihttps://doi.org/10.1007/s11664-019-07841-z-
dc.identifier.urihttps://hdl.handle.net/20.500.13091/1555-
dc.description.abstractTernary-structured thiospinels have attracted great attention in recent years for energy applications due to their attractive characteristics such as simple production, earth-abundant components and non-toxic nature. In this work, copper cobalt sulfide (CuCo2S4 or carrollite) thiospinel nanocrystals were synthesized by a hot-injection method, and detailed electrical and optoelectronic characterizations were performed in a Schottky device. The synthesized nanocrystals were used as an interfacial layer between the Au metal and p-Si semiconductor to obtain an Au/CuCo2S4/p-Si device. The structural and morphological characterizations confirmed the crystallinity, nanostructure and composition of the CuCo2S4 nanocrystals. The I-V and C-V measurements were employed to characterize the Au/CuCo2S4/p-Si device for various illumination intensities. The obtained device exhibited good rectifying and photodiode properties as well as good photocapacitance. The Au/CuCo2S4/p-Si device can be used and improved for optoelectronic applications.en_US
dc.description.sponsorshipTUBITAK (The Scientific and Technological Research Council of Turkey)Turkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [217M212]en_US
dc.description.sponsorshipThis work is supported by TUBITAK (The Scientific and Technological Research Council of Turkey) under Project Number 217M212.en_US
dc.language.isoenen_US
dc.publisherSPRINGERen_US
dc.relation.ispartofJOURNAL OF ELECTRONIC MATERIALSen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectCuco2s4en_US
dc.subjectCarrolliteen_US
dc.subjectPhotodiodeen_US
dc.subjectOptoelectronic Propertiesen_US
dc.subjectHot-Injection Methoden_US
dc.subjectSchottky-Barrier Diodesen_US
dc.subjectSeries Resistanceen_US
dc.subjectElectrical Characterizationen_US
dc.subjectV Characteristicsen_US
dc.subjectInterface Statesen_US
dc.subjectHighly Efficienten_US
dc.subjectC-Ven_US
dc.subjectLayeren_US
dc.subjectParametersen_US
dc.subjectCatalystsen_US
dc.titleTernary CuCo2S4 Thiospinel Nanocrystal-Coated Photodiode with Improved Photoresponsivity and Acceptance Angles for Optoelectronic Applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s11664-019-07841-z-
dc.identifier.scopus2-s2.0-85075686146en_US
dc.departmentFakülteler, Mühendislik ve Doğa Bilimleri Fakültesi, Kimya Mühendisliği Bölümüen_US
dc.authoridOZEL, faruk/0000-0002-3689-0469-
dc.authorwosidSarilmaz, Adem/AAK-4520-2021-
dc.authorwosidYILDIRIM, Murat/AAR-6514-2021-
dc.authorwosidOzel, Faruk/AAK-4425-2021-
dc.identifier.volume49en_US
dc.identifier.issue2en_US
dc.identifier.startpage949en_US
dc.identifier.endpage958en_US
dc.identifier.wosWOS:000498955500005en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.authorscopusid8954357900-
dc.authorscopusid55848815700-
dc.authorscopusid57190088594-
dc.authorscopusid57212010556-
dc.authorscopusid15829529900-
dc.authorscopusid35218045800-
dc.identifier.scopusqualityQ2-
item.grantfulltextopen-
item.openairetypeArticle-
item.fulltextWith Fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.languageiso639-1en-
item.cerifentitytypePublications-
crisitem.author.dept02.01. Department of Chemical Engineering-
Appears in Collections:Mühendislik ve Doğa Bilimleri Fakültesi Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collections
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collections
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