Initiated Chemical Vapor Deposition (icvd) of Poly(acrylic Acid): a Comparison Between Continuous and Closed-Batch Icvd Approaches

Abstract

In this study, poly(acrylic acid) (PAA) thin films were deposited on silicon wafer and glass surfaces by initiated chemical vapor deposition (iCVD) method using di-tert-butyl peroxide (TBPO) as the initiator and acrylic acid (AA) as the monomer. During iCVD, two different precursor feeding approaches, namely continuous and closed-batch, were employed. The effects of substrate temperature and the precursor feeding approaches on the deposition rates and surface morphology of the films were investigated. The highest deposition rates for the continuous and closed-batch iCVD approaches were found as 26.1 nm/min and 18.6 nm/min, respectively, at a substrate temperature of 15 degrees C. FTIR analysis of the films deposited by both approaches indicated high structural retention of the monomer during the polymerization. AFM results indicated that, PAA thin films possessed low RMS roughness values of 2.76 nm and 1.84 nm using continuous and closed-batch iCVD, respectively. Due to the slightly higher surface roughness of the film deposited under continuous iCVD, that film exhibited a lower water contact angle of 16.1 degrees than the film deposited in closed-batch iCVD. In terms of monomer utilization ratio, closed-batch system was found to be more effective, which may help to minimize the carbon footprint of iCVD process.