Synthesis of B Doped and In-Situ B Doped Few Layer Graphene by Chemical Vapor Deposition Technique for Hydrogen Peroxide Detection
Synthesis of B Doped and In-Situ B Doped Few Layer Graphene by Chemical Vapor Deposition Technique for Hydrogen Peroxide Detection
Abstract
In this study, boron (B)-doped graphene and insitu B-doped few-layer graphene are deposited on copper (Cu) foil by chemical vapor deposition (CVD) method. Then, B-doped graphene and insitu B-doped few-layer graphene on the Cu foils were coated onto few-layer the indium tin oxide (ITO) electrode for hydrogen peroxide (H2O2) sensor. These electrodes are characterized by Scanning Electron Microscopy-Energy Dispersive X-Ray Analysis (SEM-EDX) and Raman Spectroscopy. In addition, H2O2 sensor is investigated with cyclic voltammetry (CV) and chronoamperometry (CA).
Description
ORCID
Keywords
Chemical Vapor Deposition, Indium Tin Oxide, Hydrogen Peroxide
Fields of Science
Citation
WoS Q
Scopus Q
Source
Volume
Issue
Start Page
316
End Page
321
