Synthesis of In-Sıtu S Doped Few Layer Graphene by Chemical Vapor Deposition Technique and Their Superior Glucose Electrooxidation Activity

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Abstract

In this study, sulfur (S)-doped graphene and insitu S-doped graphene are deposited on copper (Cu) foil by chemical vapor deposition (CVD) method. Then, S-doped graphene and insitu S doped few-layer graphene on the Cu foils were coated onto few-layer the indium tin oxide (ITO) electrode for glucose electrooxidation. These electrodes are characterized by Scanning Electron Microscopy-Energy Dispersive X-Ray Analysis (SEM-EDX) and Raman Spectroscopy. In addition, glucose electrooxidation was investigated with cyclic voltammetry (CV) and chronoamperometry (CA).

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Keywords

Chemical Vapor Deposition, Few-Layer Graphene, Glucose Electrooxidation

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Start Page

303

End Page

307
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1

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5

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