Ünver, Emre

Profile URL
https://hdl.handle.net/20.500.13091/11861
Name Variants
Unver, Emre
Job Title
Email Address
eunver@ktun.edu.tr
Main Affiliation
02.01. Department of Chemical Engineering
Status
Current Staff
Website
ORCID ID
0000-0002-9097-433X
Scopus Author ID
Turkish CoHE Profile ID
5DA201AFAD83B356
Google Scholar ID
WoS Researcher ID

Research Topics

Domains
Physical Sciences
Fields
EngineeringPhysics and Astronomy
Subfields
Electrical and Electronic EngineeringAtomic and Molecular Physics, and Optics
Specific Research Areas
Perovskite Materials and Applications
Chalcogenide Semiconductor Thin Films
Semiconductor materials and interfaces

Sustainable Development Goals

SDG data is not available
This researcher does not have a Scopus ID.
This researcher does not have a WoS ID.

Publication Collaboration

Affiliation Name Count
Selçuk University 1
Konya Technical University 1
1 / 1
Data obtained from OpenAlex
Scholarly Output

1

Articles

1

Views / Downloads

4/0

Supervised MSc Theses

0

Supervised PhD Theses

0

WoS Citation Count

5

Scopus Citation Count

4

Patents

0

Projects

0

WoS Citations per Publication

5.00

Scopus Citations per Publication

4.00

Open Access Source

1

Supervised Theses

0

JournalCount
Journal of Materials Science: Materials in Electronics1
Current Page: 1 / 1

Scopus Quartile Distribution

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Scholarly Output Search Results

Now showing 1 - 1 of 1
  • Article
    Citation - WoS: 5
    Citation - Scopus: 4
    Investigation and Calculation of Electrical Performance of Lead-Free Agbii4 Perovskite Based Schottky Photodiode Using Machine Learning
    (Springer, 2025-04-01) Unver, Emre; Toprak, Ahmet; Hussaini, Ali Akbar; Kus, Mahmut; Yildirim, Murat
    Lead-free nanoparticles gain importance due to their environmentally clean and reliable production processes in optoelectronics. In this study, we synthesized AgBiI4 lead-free perovskite material and used it as an interlayer to obtain a Schottky photodiode structure. Optical, morphological, and structural properties were investigated via UV-Vis, SEM, SEM-EDS, AFM, and XRD. The crystal structure was confirmed by X-ray diffraction (XRD) results. The results obtained from the UV-Visible spectrophotometer clearly showed the peaks of the crystal structure at 566.94 nm. The band gap calculated from UV-Vis results was 1.91 eV for AgBiI4 perovskite crystals. We used AgBiI4 structures as interlayers between n-type Si and Al to obtain a photodiode heterostructure and investigate their structural sensing performance using current-voltage and current-transient measurements. Ideality factor and barrier height values were calculated using machine learning. Lead-free perovskite structures recorded excellent photodetector properties, reaching 2.636 A/W responsivity and 1.30 x 1011 Jones detectivity.