Browsing by Author "Hussaini, A.A."

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Citation - WoS: 19
Citation - Scopus: 17
High Responsivity and External Quantum Efficiency of Polyoxometalate Interlayered Schottky Type Photodiode Device
(Elsevier Ltd, 2024) Hussaini, A.A.; Tok, M.; Torlak, Y.; Yenel, E.; Durmaz, F.; Kus, M.; Yıldırım, M.
Recently polyoxometalate (POM) compounds have attracted attentions in optoelectronic fields. They can be used as an interlayer between metals and semiconductors to improve the durability, stability, and efficiency of heterojunctions. The addition of polyoxometalate interlayers resulted in high external quantum efficiency and improved optoelectronic parameters, making it functional for photodiode and photodetector applications. In this study, we synthesized Keggin-type α-A-(nBu4N)3[PW9O34(tBuSiOH)3]-0.5MeCN2 polyoxometalate compound and it was characterized by SEM, FT-IR, and 31P NMR. Electrochemical behaviors of the synthesized POM compound were studied by Galvanostat. Polyoxometalate (POM) compound was deposited on n-Si by spin-coating technique. In addition, effects of POM on the electrical properties of the Al/POM/n-Si/Al device were investigated in detail. The photodiode properties were studied with (I–V) and (I-t) measurements under light intensities ranging from 20 to 100 mW/cm2. Responsivity and detectivity of the POM interlayered photodiode have been increased significantly comparing the undoped one. While Al/n-Si has shown 9.35 × 1010 Jones detectivity and 1.881 A/W responsivity at 20 mW/cm2 light power, Al/POM/n-Si photodiode device has exhibited maximum detectivity (1.29 × 1011 Jones) and responsivity (2.937A/W) at 20 mW/cm2 light power. The external quantum efficiency of polyoxometalate interlayered heterojunction varied from 17.03 % to 34.61 % under various wavelengths. The result revealed that Al/POM/n-Si device can be used for optoelectronic applications. © 2023 Elsevier Ltd
Citation - Scopus: 3
High-Performance Uv–vis–nir Photodetectors Based on Pedot Obtained by Plasma-Enhanced Chemical Vapor Deposition
(John Wiley and Sons Inc, 2025) Hussaini, A.A.; Yılmaz, K.; Karaman, M.; Yıldırım, M.
This study presents the fabrication of organic UV–vis–NIR photodetectors based on poly(3,4-ethylenedioxythiophene) (PEDOT) thin films synthesized via a plasma-enhanced chemical vapor deposition at 10, 20, and 30 W plasma power. The effects of plasma power on polymerization, as well as optical, structural, morphological, and optoelectronic properties, are analyzed using UV–vis, Fourier transform infrared spectroscopy, scanning electron microscope, and scanning electron microscopy–energy-dispersive X-ray. The films, exhibiting a bandgap of 3.52–3.59 eV, are uniformly coated on Si surfaces. Photodiode and photodetector performance is evaluated through current–voltage and current–transient measurements under varying light intensities and wavelengths. PEDOT films synthesized at 10 W exhibit superior photodetector performance, with maximum responsivity and detectivity of 0.0975 A W−1 and 1.65 × 1010 cm Hz0.5 W−1 at 900 nm, and a noise-equivalent power of 5.38 × 10−12 W Hz−1/2. Maximum external quantum efficiency is recorded as 23.975% at 450 nm. These results emphasize the suitability of low-power PEDOT films for optoelectronic applications due to their superior morphology and optoelectronic characteristics. © 2025 Wiley-VCH GmbH.