Gürsoy, MehmetÇıtak, EmreKaraman, Mustafa2022-01-302022-01-3020221976-42512233-4998https://doi.org/10.1007/s42823-021-00309-3https://hdl.handle.net/20.500.13091/1717Large-area graphene of the order of centimeters was deposited on copper substrates by low-pressure chemical vapor deposition (LPCVD) using hexane as the carbon source. The effect of temperature and the carrier gas flowrates on the quality and uniformity of the as-deposited graphene was investigated using the Raman analysis. The film deposited at 870 degrees C with a total carrier gas flowrate of 50 sccm is predominantly single-layer with very low defects according to the Raman spectra. The 2D/G peak intensity ratios obtained from the Raman spectra of samples from three different locations of graphene deposited on a whole copper catalyst was used to calculate the large-area uniformity. Based on the results, a very high uniformity of 89.6% was calculated for the graphene deposited at 870 degrees C. The uniformity was observed to decrease with increasing temperature. Similar to the thickness uniformity, the electrical conductivity values obtained as a result of I-V measurements and water contact angle measurements were found to be close to each other for the graphene deposited under the same deposition conditions.eninfo:eu-repo/semantics/closedAccessGrapheneLpcvdUniformityLarge-AreaSingle-Layer GrapheneGrowthTransparentExfoliationArticle10.1007/s42823-021-00309-32-s2.0-85120081637