Synthesis of B Doped and In-Situ B Doped Few Layer Graphene by Chemical Vapor Deposition Technique for Hydrogen Peroxide Detection

Çağlar, AykutUlus, BerdanNadeesh, AbdullahKıvrak, HilalGökdoğan Şahin, Özlem2024-10-232024-10-232019978-605-184-173-1https://hdl.handle.net/20.500.13091/6496In this study, boron (B)-doped graphene and insitu B-doped few-layer graphene are deposited on copper (Cu) foil by chemical vapor deposition (CVD) method. Then, B-doped graphene and insitu B-doped few-layer graphene on the Cu foils were coated onto few-layer the indium tin oxide (ITO) electrode for hydrogen peroxide (H2O2) sensor. These electrodes are characterized by Scanning Electron Microscopy-Energy Dispersive X-Ray Analysis (SEM-EDX) and Raman Spectroscopy. In addition, H2O2 sensor is investigated with cyclic voltammetry (CV) and chronoamperometry (CA).eninfo:eu-repo/semantics/openAccessChemical Vapor DepositionIndium Tin OxideHydrogen PeroxideSynthesis of B Doped and In-Situ B Doped Few Layer Graphene by Chemical Vapor Deposition Technique for Hydrogen Peroxide DetectionConference Object