Synthesis of In-Sıtu S Doped Few Layer Graphene by Chemical Vapor Deposition Technique and Their Superior Glucose Electrooxidation Activity

Çağlar, AykutUlaş, BerdanMuhammady, ShekibaKıvrak, HilalGökdoğan Şahin, Özlem2024-10-222024-10-222019978-605-184-173-1https://hdl.handle.net/20.500.13091/6492In this study, sulfur (S)-doped graphene and insitu S-doped graphene are deposited on copper (Cu) foil by chemical vapor deposition (CVD) method. Then, S-doped graphene and insitu S doped few-layer graphene on the Cu foils were coated onto few-layer the indium tin oxide (ITO) electrode for glucose electrooxidation. These electrodes are characterized by Scanning Electron Microscopy-Energy Dispersive X-Ray Analysis (SEM-EDX) and Raman Spectroscopy. In addition, glucose electrooxidation was investigated with cyclic voltammetry (CV) and chronoamperometry (CA).eninfo:eu-repo/semantics/openAccessChemical Vapor DepositionFew-Layer GrapheneGlucose ElectrooxidationSynthesis of In-Sıtu S Doped Few Layer Graphene by Chemical Vapor Deposition Technique and Their Superior Glucose Electrooxidation ActivityConference Object